A two-step surface modification of high-efficiency III-V photoelectrolysis materials provides corrosion protection for hundreds of hours without sacrificing conversion efficiency.
- [NREL] High-Efficiency CdTe Ink-Based Solar Cells Using Nanocrystals
- Perovskite – The Future of Solar Energy Technology
- ScienceDaily: New Technique For Growing High-Efficiency Perovskite Solar Cells
- [NREL] NREL Investigates Critical Properties of Perovskite Halides Solar Cells
- Why is it Important to Turn Waste or By-Products into Reusable Materials
Scientists from the National Renewable Energy Laboratory (NREL) have developed a method of treating semiconductor surfaces that can stabilize the material under hydrogen evolution conditions in an electrolyte.
This method can specifically benefit photoelectrochemical (PEC) devices, which use sunlight to directly split water into hydrogen and oxygen. In a PEC device, a light-harvesting system is combined with a water-splitting system, which comprises a semiconductor immersed in an aqueous electroyte solution. A problem with semiconductor materials currently used in the light-harvesting system is that they can corrode because of prolonged operation under illumination in harsh aqueous electrolytes.
NREL’s approach mitigates the corrosion problem by using a two-step method: 1) an ion implantation step, bombarding the semiconductor surface with nitrogen (N2 +) ions, and 2) a deposition step, placing small amounts of a platinum-ruthenium alloy (PtRu) on the semiconductor surface (see left image below). The N2 + implantation and flash sputtering of a PtRu alloy results in covering about 30% of the semiconductor surface with ~5-nm particles.
This treatment has enabled over 300 hours of stability for a p-GaInP2 photocathode at 10 mA/cm2. In another test, NREL scientists optimized the N2 + implantation surface passivation treatment for p-InP semiconductors with a 1.33-eV bandgap. The promising results demonstrated durability of up to 24 hours of continuous hydrogen evolution, operating at ~25 mA/ cm2 under 1-sun illumination.
Key Research Results
Achievement NREL scientists have developed a method of treating semiconductor surfaces that can stabilize the material under hydrogen evolution conditions in an electrolyte.
In one test, NREL scientists performed an optimized N2 + implantation surface passivation treatment to p-InP semiconductors with a 1.33-eV bandgap. The promising results demonstrated durability up to 24 hours of continuous hydrogen evolution, operating at ~25 mA/cm2 under 1-sun illumination.
Successful development of highperformance PEC devices with good durability can support economical hydrogen production as a way to store intermittent solar radiation in chemical bonds
Technical Contact: Todd Deutsch, email@example.com
References: Deutsch, T., et al. “Stable Electrode Surface and Methods.” Non-provisional patent (filed May 14, 2014). http://www.faqs.org/patents/app/20140332374
Latest posts by Jack (see all)
- How Stores Can Adopt Greener Practices and Eco-friendly Solutions - May 31, 2020
- What are the best uses of coir erosion control products? - January 27, 2020
- How to minimize plastic waste? - August 7, 2019